Semiconductor device including a super junction structure in a SiC semiconductor body

An embodiment of a semiconductor device includes a SiC semiconductor body region having a body region of a first conductivity type, a drift zone of a second conductivity type, and a compensation structure of the first conductivity type. The compensation structure and a drift zone section of the drif...

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Bibliographic Details
Main Authors Elpelt, Rudolf, Mauder, Anton, Peters, Dethard
Format Patent
LanguageEnglish
Published 07.04.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An embodiment of a semiconductor device includes a SiC semiconductor body region having a body region of a first conductivity type, a drift zone of a second conductivity type, and a compensation structure of the first conductivity type. The compensation structure and a drift zone section of the drift zone form a super junction structure. The compensation structure adjoins the body region and is positioned entirely below the body region in a vertical direction perpendicular to a surface of the SiC semiconductor body. The compensation structure includes a first compensation sub-structure and a second compensation sub-structure. The first compensation sub-structure and the second compensation sub-structure are arranged above one another in the vertical direction. A width of the compensation structure changes along the vertical direction.
Bibliography:Application Number: US201816169671