Methods of manufacturing semiconductor devices with a deep barrier layer

A method of manufacturing a semiconductor device includes: etching a plurality of trenches to a first depth in a semiconductor substrate; doping a region of the semiconductor substrate surrounding a bottom of the trenches at the first depth to form a doped region in the semiconductor substrate; afte...

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Bibliographic Details
Main Author Karmous, Alim
Format Patent
LanguageEnglish
Published 31.03.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a semiconductor device includes: etching a plurality of trenches to a first depth in a semiconductor substrate; doping a region of the semiconductor substrate surrounding a bottom of the trenches at the first depth to form a doped region in the semiconductor substrate; after the doped region is formed, etching the plurality of trenches deeper into the semiconductor substrate to a second depth greater than the first depth, adjacent ones of the trenches being separated from one another by a semiconductor mesa; and forming a body region above the doped region in the semiconductor mesas.
Bibliography:Application Number: US201815948289