Methods of manufacturing semiconductor devices with a deep barrier layer
A method of manufacturing a semiconductor device includes: etching a plurality of trenches to a first depth in a semiconductor substrate; doping a region of the semiconductor substrate surrounding a bottom of the trenches at the first depth to form a doped region in the semiconductor substrate; afte...
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Main Author | |
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Format | Patent |
Language | English |
Published |
31.03.2020
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Subjects | |
Online Access | Get full text |
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Summary: | A method of manufacturing a semiconductor device includes: etching a plurality of trenches to a first depth in a semiconductor substrate; doping a region of the semiconductor substrate surrounding a bottom of the trenches at the first depth to form a doped region in the semiconductor substrate; after the doped region is formed, etching the plurality of trenches deeper into the semiconductor substrate to a second depth greater than the first depth, adjacent ones of the trenches being separated from one another by a semiconductor mesa; and forming a body region above the doped region in the semiconductor mesas. |
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Bibliography: | Application Number: US201815948289 |