Imaging optical unit for a metrology system for examining a lithography mask

An imaging optical unit serves within a metrology system for examining a lithography mask. The lithography mask can be arranged in an object field of the imaging optical unit. The object field is defined by two mutually perpendicular object field coordinates. The imaging optical unit has an aperture...

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Bibliographic Details
Main Authors Beder, Susanne, Ruoff, Johannes, Neumann, Jens Timo, Mann, Hans-Jürgen, Müller, Ralf, Matejka, Ulrich
Format Patent
LanguageEnglish
Published 31.03.2020
Subjects
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
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Summary:An imaging optical unit serves within a metrology system for examining a lithography mask. The lithography mask can be arranged in an object field of the imaging optical unit. The object field is defined by two mutually perpendicular object field coordinates. The imaging optical unit has an aperture stop of which the aspect ratio in the direction of the two object field coordinates differs from 1. This results in an imaging optical unit which can be used for the examination of lithography masks that are designed for projection exposure with an anamorphic projection optical unit.
Bibliography:Application Number: US201715410904