Film bulk acoustic resonator with spurious resonance suppression

Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer. The piezoelectric laye...

Full description

Saved in:
Bibliographic Details
Main Authors Kong, Alvin M, Hou, Liping Daniel, Stokes, Robert B, Wang, Shing-Kuo, Hyun, Dae-Jin
Format Patent
LanguageEnglish
Published 24.03.2020
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
Online AccessGet full text

Cover

More Information
Summary:Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer. The piezoelectric layer is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. Perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or posts or beams supporting the second electrode, reduce resonance of spurious waves.
Bibliography:Application Number: US201715789109