Field plate structure for power semiconductor device and manufacturing method thereof

A structure and a manufacturing method of a power semiconductor device are provided. A structure of thin semi-insulating field plates (32, 33, 34) located between metal electrodes (21, 22, 23) at the surface of the power semiconductor device is provided. The thin semi-insulating field plates (32, 33...

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Bibliographic Details
Main Authors Sin, Johnny Kin On, Ahmed, Iftikhar, Ng, Chun Wai
Format Patent
LanguageEnglish
Published 17.03.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A structure and a manufacturing method of a power semiconductor device are provided. A structure of thin semi-insulating field plates (32, 33, 34) located between metal electrodes (21, 22, 23) at the surface of the power semiconductor device is provided. The thin semi-insulating field plates (32, 33, 34) are formed by depositing before metallization and annealing after the metallization. The present invention can be used in lateral power semiconductor devices and vertical power semiconductor devices.
Bibliography:Application Number: US201414771095