Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof
A method is provided for preparing a semiconductor-on-insulator structure comprising a flowable insulating layer or a reflowable insulating layer.
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| Main Author | |
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| Format | Patent |
| Language | English |
| Published |
17.03.2020
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A method is provided for preparing a semiconductor-on-insulator structure comprising a flowable insulating layer or a reflowable insulating layer. |
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| AbstractList | A method is provided for preparing a semiconductor-on-insulator structure comprising a flowable insulating layer or a reflowable insulating layer. |
| Author | Kweskin, Sasha Joseph |
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| Notes | Application Number: US201716072203 |
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| RelatedCompanies | GlobalWafers Co., Ltd |
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| Snippet | A method is provided for preparing a semiconductor-on-insulator structure comprising a flowable insulating layer or a reflowable insulating layer. |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof |
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