Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof

A method is provided for preparing a semiconductor-on-insulator structure comprising a flowable insulating layer or a reflowable insulating layer.

Saved in:
Bibliographic Details
Main Author Kweskin, Sasha Joseph
Format Patent
LanguageEnglish
Published 17.03.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method is provided for preparing a semiconductor-on-insulator structure comprising a flowable insulating layer or a reflowable insulating layer.
Bibliography:Application Number: US201716072203