Method of making and device having a common electrode for transistor gates and capacitor plates
Disclosed herein is a circuit comprising a first thin film transistor (TFT) and storage capacitor having a first electrode and a second electrode configured to face to each other. A second TFT is coupled to the capacitor, wherein a first gate electrode of the first TFT, a first electrode of the stor...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
03.03.2020
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Subjects | |
Online Access | Get full text |
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Summary: | Disclosed herein is a circuit comprising a first thin film transistor (TFT) and storage capacitor having a first electrode and a second electrode configured to face to each other. A second TFT is coupled to the capacitor, wherein a first gate electrode of the first TFT, a first electrode of the storage capacitor and a second gate electrode of the second TFT are integrally formed. |
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Bibliography: | Application Number: US201816153482 |