Semiconductor device and a corresponding method of manufacturing semiconductor devices

• Main Authors: Venegoni, Ivan, Colpani, Paolo, Sciarrillo, Samuele
• Format: Patent
• Language: English
• Published: 18.02.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes a passivation layer, an interconnection metallization 37 having a peripheral portion over the passivation layer, and an outer surface coating 37 on the interconnection metallization. A diffusion barrier layer comprises an inner planar portion directly on the surface of the passivation layer and a peripheral portion extending along a plane at a vertical height higher than the surface of the passivation layer, so that the peripheral portion forms with the inner portion a step in the barrier layer. The outer surface coating, has a vertical wall with a foot adjacent to the peripheral portion and positioned at the vertical height over the surface of the passivation layer to form a hollow recess area between the surface of the passivation layer and both of the peripheral portion and the foot of the outer surface coating.