Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device includes: forming a transistor in a semiconductor substrate; forming a capacitor including a hydrogen-containing top electrode over the transistor; and performing an annealing process for hydrogen passivation after the capacitor is formed.

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Bibliographic Details
Main Authors Hwang, Sun-Hwan, Jeon, Bong-Seok, Park, Ji-Hwan, Lee, Mi-Ri, Jang, Il-Sik, Joung, Yong-Soo
Format Patent
LanguageEnglish
Published 11.02.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating a semiconductor device includes: forming a transistor in a semiconductor substrate; forming a capacitor including a hydrogen-containing top electrode over the transistor; and performing an annealing process for hydrogen passivation after the capacitor is formed.
Bibliography:Application Number: US201715700615