Method for improving safety of voltage regulator

A method for improving safety of voltage regulator is disclosed. In order to improve safety of a voltage regulator, a MOS-FET is disposed on a source power lane that receives power supplied from a DC power supply. A set of voltage regulators is connected to a set of fork power lanes, correspondingly...

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Bibliographic Details
Main Authors Odaohhara, Shigefumi, Hinkle, Jonathan Randall
Format Patent
LanguageEnglish
Published 28.01.2020
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Summary:A method for improving safety of voltage regulator is disclosed. In order to improve safety of a voltage regulator, a MOS-FET is disposed on a source power lane that receives power supplied from a DC power supply. A set of voltage regulators is connected to a set of fork power lanes, correspondingly, branching off from the source power lane. PTC thermistors are disposed on a surface or in the vicinity of semiconductor chips of the voltage regulators. When temperature at any one of the PTC thermistors increases, a protection controller turns off the MOS-FET. When temperature detected by a temperature sensor incorporated within the semiconductor chip has increased, each of the voltage regulators turns off the MOS-FET via a base management controller.
Bibliography:Application Number: US201816132067