Methods of forming metal-gate semiconductor devices with enhanced mobility of charge carriers

Methods and devices for enhancing mobility of charge carriers. An integrated circuit may include semiconductor devices of two types. The first type of device may include a metallic gate and a channel strained in a first manner. The second type of device may include a metallic gate and a channel stra...

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Bibliographic Details
Main Authors Niu, Chengyu, Yang, Heng, Zhang, John H
Format Patent
LanguageEnglish
Published 28.01.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods and devices for enhancing mobility of charge carriers. An integrated circuit may include semiconductor devices of two types. The first type of device may include a metallic gate and a channel strained in a first manner. The second type of device may include a metallic gate and a channel strained in a second manner. The gates may include, collectively, three or fewer metallic materials. The gates may share a same metallic material. A method of forming the semiconductor devices on an integrated circuit may include depositing first and second metallic layers in first and second regions of the integrated circuit corresponding to the first and second gates, respectively.
Bibliography:Application Number: US201514986229