Devices with backside metal structures and methods of formation thereof

A semiconductor device includes a trench extending through a semiconductor substrate and an epitaxial layer disposed over a first side of the semiconductor substrate. The epitaxial layer partially fills a portion of the trench. The semiconductor device further includes a back side metal layer dispos...

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Bibliographic Details
Main Authors Hellmund, Oliver, Baumgartl, Johannes, Neidhart, Thomas Christian, Muri, Ingo, Moder, Iris, Schulze, Hans-Joachim
Format Patent
LanguageEnglish
Published 14.01.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a trench extending through a semiconductor substrate and an epitaxial layer disposed over a first side of the semiconductor substrate. The epitaxial layer partially fills a portion of the trench. The semiconductor device further includes a back side metal layer disposed over a second side of the semiconductor substrate. The back side metal layer extends into the trench and fills the remaining portion of the trench. The epitaxial layer partially filling the trench contacts the back side metal layer filling the remaining portion within the trench.
Bibliography:Application Number: US201815951995