Gate structures with various widths and method for forming the same
Embodiments of a semiconductor device structure and a method for forming the same are provided. The semiconductor device structure includes a substrate and a first metal gate structure formed over the substrate. The first metal gate structure has a first width. The semiconductor device structure fur...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
31.12.2019
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Subjects | |
Online Access | Get full text |
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Summary: | Embodiments of a semiconductor device structure and a method for forming the same are provided. The semiconductor device structure includes a substrate and a first metal gate structure formed over the substrate. The first metal gate structure has a first width. The semiconductor device structure further includes a first contact formed adjacent to the first metal gate structure and a second metal gate structure formed over the substrate. The second metal gate structure has a second width smaller than the first width. The semiconductor device structure further includes an insulating layer formed over the second metal gate structure and a second contact self-aligned to the second metal gate structure. |
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Bibliography: | Application Number: US201815898919 |