Semiconductor image sensor

A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors arranged in an array, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, and a reflective grid disposed over...

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Bibliographic Details
Main Authors Chou, Keng-Yu, Wang, Chen-Jong, Tseng, Chien-Hsien, Hashimoto, Kazuaki, Chiang, Wei-Chieh
Format Patent
LanguageEnglish
Published 17.12.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors arranged in an array, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, and a reflective grid disposed over the isolation grid on the back side of the substrate. A depth of the reflective grid is less than a depth of the isolation grid.
Bibliography:Application Number: US201815928748