Method for producing a semiconductor body

A method for producing a semiconductor body is disclosed. In an embodiment, the method includes providing a semiconductor body, applying a first mask layer and a second mask layer to the semiconductor body and forming at least one second mask opening in the second mask layer and at least one recess...

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Bibliographic Details
Main Author Eberhard, Franz
Format Patent
LanguageEnglish
Published 05.11.2019
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for producing a semiconductor body is disclosed. In an embodiment, the method includes providing a semiconductor body, applying a first mask layer and a second mask layer to the semiconductor body and forming at least one second mask opening in the second mask layer and at least one recess in the semiconductor body in a region of the at least one first mask opening in the first mask layer, wherein the recess comprises a side face and a bottom face and the recess forms an undercut with the second mask opening. The method further includes applying a passivation layer unpatterned to the second mask layer and to the side face and the bottom face of the at least one recess and removing the passivation layer so that the passivation layer remains at least in part on the side face of the at least one recess.
Bibliography:Application Number: US201615552181