Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film

According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 μm2 or more, and a dislocation density that is less than 5×106 cm−2.

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Bibliographic Details
Main Authors	Oshima, Yuichi, Fujita, Shizuo, Kaneko, Kentaro, Hitora, Toshimi, Matsuda, Tokiyoshi, Kasu, Makoto, Shinohe, Takashi, Kawara, Katsuaki
Format	Patent
Language	English
Published	29.10.2019
Subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Summary:	According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 μm2 or more, and a dislocation density that is less than 5×106 cm−2.
Bibliography:	Application Number: US201816106753