Extended short-wave infrared strain-layered superlattice on indium arsenide substrate and associated methods

Materials and methods may be provided for short-wave infrared (SWIR) superlattice materials. The superlattice material includes a first sub-layer comprising InAs, and a second sub-layer adjacent to the first sub-layer including AlSb, AlAsSb, or InAlAsSb.

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Bibliographic Details
Main Authors Huang, Edward K, Hood, Andrew D
Format Patent
LanguageEnglish
Published 22.10.2019
Subjects
BASIC ELECTRIC ELEMENTS
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERATION
GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRA-REDRADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, E.G. USINGPHOTOVOLTAIC [PV] MODULES
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Summary:Materials and methods may be provided for short-wave infrared (SWIR) superlattice materials. The superlattice material includes a first sub-layer comprising InAs, and a second sub-layer adjacent to the first sub-layer including AlSb, AlAsSb, or InAlAsSb.
Bibliography:Application Number: US201615384052