Semiconductor device and method for manufacturing the same

A semiconductor device including a semiconductor substrate including a trench, the semiconductor substrate having a crystal structure; and an insulating layer covering an inner sidewall of the trench, wherein the inner sidewall of the trench has at least one plane included in a {320} family of plane...

Full description

Saved in:
Bibliographic Details
Main Authors Chung, Chunhyung, Kim, Junsoo, Yamada, Satoru, Choi, Eunae, Jeong, MoonYoung, Cho, Min Hee, Lee, Sungsam, Ahn, Hyoshin, Jeon, Joohyun, Chae, Kyo-Suk
Format Patent
LanguageEnglish
Published 01.10.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

Abstract A semiconductor device including a semiconductor substrate including a trench, the semiconductor substrate having a crystal structure; and an insulating layer covering an inner sidewall of the trench, wherein the inner sidewall of the trench has at least one plane included in a {320} family of planes of the crystal structure or at least one plane similar to the {320} family of planes.
AbstractList A semiconductor device including a semiconductor substrate including a trench, the semiconductor substrate having a crystal structure; and an insulating layer covering an inner sidewall of the trench, wherein the inner sidewall of the trench has at least one plane included in a {320} family of planes of the crystal structure or at least one plane similar to the {320} family of planes.
Author Lee, Sungsam
Jeong, MoonYoung
Chung, Chunhyung
Choi, Eunae
Kim, Junsoo
Ahn, Hyoshin
Yamada, Satoru
Jeon, Joohyun
Cho, Min Hee
Chae, Kyo-Suk
Author_xml – fullname: Chung, Chunhyung
– fullname: Kim, Junsoo
– fullname: Yamada, Satoru
– fullname: Choi, Eunae
– fullname: Jeong, MoonYoung
– fullname: Cho, Min Hee
– fullname: Lee, Sungsam
– fullname: Ahn, Hyoshin
– fullname: Jeon, Joohyun
– fullname: Chae, Kyo-Suk
BookMark eNrjYmDJy89L5WSwCk7NzUzOz0spTS7JL1JISS3LTE5VSMxLUchNLcnIT1FIA4rmJuaVpiUml5QWZealK5RkpCoUJ-am8jCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSS-NBgQwMTY0MzCwMnI2Ni1AAAltcxBg
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US10431680B2
GroupedDBID EVB
ID FETCH-epo_espacenet_US10431680B23
IEDL.DBID EVB
IngestDate Fri Jul 19 16:08:28 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US10431680B23
Notes Application Number: US201615391888
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191001&DB=EPODOC&CC=US&NR=10431680B2
ParticipantIDs epo_espacenet_US10431680B2
PublicationCentury 2000
PublicationDate 20191001
PublicationDateYYYYMMDD 2019-10-01
PublicationDate_xml – month: 10
  year: 2019
  text: 20191001
  day: 01
PublicationDecade 2010
PublicationYear 2019
RelatedCompanies SAMSUNG ELECTRONICS CO., LTD
RelatedCompanies_xml – name: SAMSUNG ELECTRONICS CO., LTD
Score 3.2185817
Snippet A semiconductor device including a semiconductor substrate including a trench, the semiconductor substrate having a crystal structure; and an insulating layer...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Semiconductor device and method for manufacturing the same
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191001&DB=EPODOC&locale=&CC=US&NR=10431680B2
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1bS8MwFD6MKeqbTkXnhQjSt2LdGtcKReiNIeyC3WRvI2lTUFg61g7_vidZ53zRt5DA4STwnUvODeDesTKL8jwzucvRQREdbrq5a5k9_thjNnOZw1REdzB86k_t1xmdNeBzWwuj-4R-6eaIiKgU8V5peb3cfWKFOreyfOAfuFW8xBMvNGrvGJ0PFLtG6HvReBSOAiMIvGliDN_UkFs1osnyUVzvKTNa9dmP3n1VlbL8rVLiY9gfIzVZnUBDyBYcBtvJay04GNQBb1zW2CtP4TlReeyFVA1aixXJhMI4YTIjmynQBM1PsmByrWoVdPEhQeOOlGwhzuAujiZB30Qm5j83nk-THb_dc2jKQooLICmnjpOldtfizOY5dylNWY7qxWKdlFF-Ce2_6bT_O7yCI_V6myy1a2hWq7W4QW1b8Vv9TN9uCoUu
link.rule.ids 230,309,786,891,25594,76906
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1bS8MwFD6MKc43nYrOWwTpW7FujWuFIrTdmLobbpW9jaRNQWHp2Dr8-55knfNF30ICh5PAdy45N4Bbx0osytPE5C5HB0XUuemmrmU2-X2T2cxlDlMR3V7_oRPZLxM6KcHnphZG9wn90s0REVEx4j3X8nq-_cQKdW7l8o5_4Fb21B57oVF4x-h8oNg1Qt9rDQfhIDCCwItGRv9NDblVI5osH8X1TlN151Wm07uvqlLmv1VK-wB2h0hN5odQErIKlWAzea0Ke70i4I3LAnvLI3gcqTz2TKoGrdmCJEJhnDCZkPUUaILmJ5kxuVK1Crr4kKBxR5ZsJo7hpt0aBx0TmZj-3Hgajbb8Nk6gLDMpToHEnDpOEtsNizObp9ylNGYpqheL1WNG-RnU_qZT--_wGiqdca877T73X89hX73kOmPtAsr5YiUuUfPm_Eo_2TfRLogb
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Semiconductor+device+and+method+for+manufacturing+the+same&rft.inventor=Chung%2C+Chunhyung&rft.inventor=Kim%2C+Junsoo&rft.inventor=Yamada%2C+Satoru&rft.inventor=Choi%2C+Eunae&rft.inventor=Jeong%2C+MoonYoung&rft.inventor=Cho%2C+Min+Hee&rft.inventor=Lee%2C+Sungsam&rft.inventor=Ahn%2C+Hyoshin&rft.inventor=Jeon%2C+Joohyun&rft.inventor=Chae%2C+Kyo-Suk&rft.date=2019-10-01&rft.externalDBID=B2&rft.externalDocID=US10431680B2