Semiconductor device and method for manufacturing the same

A semiconductor device including a semiconductor substrate including a trench, the semiconductor substrate having a crystal structure; and an insulating layer covering an inner sidewall of the trench, wherein the inner sidewall of the trench has at least one plane included in a {320} family of plane...

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Main Authors Chung, Chunhyung, Kim, Junsoo, Yamada, Satoru, Choi, Eunae, Jeong, MoonYoung, Cho, Min Hee, Lee, Sungsam, Ahn, Hyoshin, Jeon, Joohyun, Chae, Kyo-Suk
Format Patent
LanguageEnglish
Published 01.10.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device including a semiconductor substrate including a trench, the semiconductor substrate having a crystal structure; and an insulating layer covering an inner sidewall of the trench, wherein the inner sidewall of the trench has at least one plane included in a {320} family of planes of the crystal structure or at least one plane similar to the {320} family of planes.
Bibliography:Application Number: US201615391888