Semiconductor device and manufacturing method thereof

A semiconductor device includes a first semiconductor layer, a second semiconductor layer spaced apart from the first semiconductor layer and disposed on the first semiconductor layer, a gate stack structure disposed on the second semiconductor layer, a third semiconductor layer positioned between t...

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Bibliographic Details
Main Authors Lee, Seung Cheol, Lee, Bong Hoon, Choi, Kang Sik
Format Patent
LanguageEnglish
Published 24.09.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A semiconductor device includes a first semiconductor layer, a second semiconductor layer spaced apart from the first semiconductor layer and disposed on the first semiconductor layer, a gate stack structure disposed on the second semiconductor layer, a third semiconductor layer positioned between the first and second semiconductor layers, and a channel pillar passing through the gate stack structure, the second semiconductor layer and the third semiconductor layer and extending into the first semiconductor layer.
Bibliography:Application Number: US201916284948