White light emitting structures with controllable emission color temperature

Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient contro...

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Bibliographic Details
Main Authors Chen, Jyh-Chia, El-Ghoroury, Hussein S, Chuang, Chih-Li, Kisin, Mikhail V, Yeh, Yea-Chuan Milton
Format Patent
LanguageEnglish
Published 17.09.2019
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.
Bibliography:Application Number: US201815990494