High-voltage transistor device with thick gate insulation layers

• Main Authors: Kenkare, Nilesh, Chan, Nigel, Smith, Elliot John
• Format: Patent
• Language: English
• Published: 17.09.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of forming a semiconductor device is provided including the steps of providing a silicon-on-insulator (SOI) substrate comprising a semiconductor bulk substrate, a buried insulation layer formed on the semiconductor bulk substrate and a semiconductor layer positioned on the buried insulation layer, and forming a first transistor device, wherein forming the first transistor device includes forming a channel region in the semiconductor bulk substrate and forming a gate insulation layer over the channel region partially of a part of the buried insulation layer and wherein forming the gate insulation layer includes oxidizing a part of the semiconductor layer.