Method of forming fin-shaped structure having ladder-shaped cross-sectional profile

A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two m...

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Main Authors Hung, Yu-Hsiang, Chen, Yi-Wei, Fu, Ssu-I, Liu, Chia-Jong, Chang, Chung-Fu, Shen, Wen-Jiun, Wu, Yen-Liang, Lu, Man-Ling
Format Patent
LanguageEnglish
Published 17.09.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.
Bibliography:Application Number: US201715688885