Semiconductor device and method for manufacturing same

According to one embodiment, the source layer includes a semiconductor layer including a dopant. The columnar portions are disposed in an area between the separation portions. The columnar portions extend in the stacking direction through the stacked body and through the semiconductor layer. The col...

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Bibliographic Details
Main Authors Kawano, Yusuke, Arisumi, Osamu
Format Patent
LanguageEnglish
Published 10.09.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to one embodiment, the source layer includes a semiconductor layer including a dopant. The columnar portions are disposed in an area between the separation portions. The columnar portions extend in the stacking direction through the stacked body and through the semiconductor layer. The columnar portions include a plurality of semiconductor bodies including sidewall portions contacting the semiconductor layer. The dopant diffusion prevention film is provided inside the semiconductor layer and separated from the columnar portions in an area between the columnar portions. The dopant diffusion prevention film is not provided inside the semiconductor layer in an area between the separation portion and the columnar portions.
Bibliography:Application Number: US201815915601