Etching method
An etching method for etching a silicon oxide film is provided that includes generating a plasma from a gas including a hydrogen-containing gas and a fluorine-containing gas using a high frequency power for plasma generation, and etching the silicon oxide film using the generated plasma. The fluorin...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
10.09.2019
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Subjects | |
Online Access | Get full text |
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Summary: | An etching method for etching a silicon oxide film is provided that includes generating a plasma from a gas including a hydrogen-containing gas and a fluorine-containing gas using a high frequency power for plasma generation, and etching the silicon oxide film using the generated plasma. The fluorine-containing gas includes a hydrofluorocarbon gas, and the sticking coefficient of radicals generated from the hydrofluorocarbon gas is higher than the sticking coefficient of radicals generated from carbon tetrafluoride (CF4). |
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Bibliography: | Application Number: US201615378167 |