Thin film transistor unaffected by light and display apparatus having the same
A thin film transistor includes a gate electrode, a first insulating layer disposed to cover the gate electrode, a semiconductor layer disposed on the first insulating layer that includes a first side surface portion, a source electrode disposed on the semiconductor layer, and a drain electrode disp...
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Main Authors | , , , , , , , , |
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Format | Patent |
Language | English |
Published |
10.09.2019
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Subjects | |
Online Access | Get full text |
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Summary: | A thin film transistor includes a gate electrode, a first insulating layer disposed to cover the gate electrode, a semiconductor layer disposed on the first insulating layer that includes a first side surface portion, a source electrode disposed on the semiconductor layer, and a drain electrode disposed on the first insulating layer that includes a second side surface portion. The first side surface portion makes contact with the second side surface portion. |
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Bibliography: | Application Number: US201313782823 |