Method of fabricating electrostatically enhanced fins and stacked nanowire field effect transistors

Non-planar semiconductor devices including semiconductor fins or stacked semiconductor nanowires that are electrostatically enhanced are provided. The electrostatic enhancement is achieved in the present application by epitaxially growing a semiconductor material protruding portion on exposed sidewa...

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Bibliographic Details
Main Authors Doris, Bruce B, Cheng, Kangguo, Reznicek, Alexander, Hashemi, Pouya, Khakifirooz, Ali
Format Patent
LanguageEnglish
Published 27.08.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Non-planar semiconductor devices including semiconductor fins or stacked semiconductor nanowires that are electrostatically enhanced are provided. The electrostatic enhancement is achieved in the present application by epitaxially growing a semiconductor material protruding portion on exposed sidewalls of alternating semiconductor material portions of at least one hard mask capped semiconductor-containing fin structure that is formed on a substrate.
Bibliography:Application Number: US201815923890