Photoelectric conversion element and solid-state imaging device

• Main Authors: Obana, Yoshiaki, Yagi, Iwao, Shimokawa, Masami, Nakayama, Norikazu, Hasegawa, Yuta, Matsuzawa, Nobuyuki, Takemura, Ichiro, Mogi, Hideaki, Yamaguchi, Tetsuji
• Format: Patent
• Language: English
• Published: 06.08.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.