Method of manufacturing semiconductor device through by-product removal from conductive layer

The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns inclu...

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Main Authors Kim, Kyeong Bae, Kim, Jong Gi, Shim, Jung Myoung, Eom, Hyeng Woo, Ko, Min Sung, Sheen, Dong Sun, Yang, Young Ho, Lee, Kwang Wook, Choi, Won Joon, Chung, Woo Jae
Format Patent
LanguageEnglish
Published 06.08.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.
Bibliography:Application Number: US201815961143