Nitride semiconductor device

A nitride semiconductor device is provided, including a substrate having a first surface and a second surface opposite to each other; a nucleation layer disposed on the first surface of the substrate; a doped nitride semiconductor layer disposed on the nucleation layer; a doped first buffer layer di...

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Bibliographic Details
Main Authors Chu, Kuei-Yi, Lin, Shih-Po, Chen, Chih-Wei, Tsai, Jung-Tse, Lin, Heng-Kuang
Format Patent
LanguageEnglish
Published 30.07.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A nitride semiconductor device is provided, including a substrate having a first surface and a second surface opposite to each other; a nucleation layer disposed on the first surface of the substrate; a doped nitride semiconductor layer disposed on the nucleation layer; a doped first buffer layer disposed on the doped nitride semiconductor layer; a channel layer disposed on the doped first buffer layer; a barrier layer disposed on the channel layer; a first electrode disposed on the barrier layer; a second electrode electrically connected to the doped nitride semiconductor layer; and a doped region disposed at least in a portion of the doped nitride semiconductor layer, wherein the doped region is extended from below the first electrode to be partially overlapped with the second electrode.
Bibliography:Application Number: US201816186593