Nitride semiconductor device

A nitride semiconductor device includes: a substrate having a first major surface and a second major surface; a first nitride semiconductor layer of an n-type which is disposed on the first major surface and has a protrusion; a second nitride semiconductor layer of a p-type disposed on the protrusio...

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Main Authors Tamura, Satoshi, Ishida, Masahiro, Ueda, Tetsuzo, Shibata, Daisuke, Tanaka, Kenichiro, Kajitani, Ryo
Format Patent
LanguageEnglish
Published 16.07.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract A nitride semiconductor device includes: a substrate having a first major surface and a second major surface; a first nitride semiconductor layer of an n-type which is disposed on the first major surface and has a protrusion; a second nitride semiconductor layer of a p-type disposed on the protrusion; a first anode electrode disposed above the first nitride semiconductor layer and the second nitride semiconductor layer; and a cathode electrode disposed under the second major surface, and a lateral surface of the protrusion is inclined by a first angle with respect to the first major surface.
AbstractList A nitride semiconductor device includes: a substrate having a first major surface and a second major surface; a first nitride semiconductor layer of an n-type which is disposed on the first major surface and has a protrusion; a second nitride semiconductor layer of a p-type disposed on the protrusion; a first anode electrode disposed above the first nitride semiconductor layer and the second nitride semiconductor layer; and a cathode electrode disposed under the second major surface, and a lateral surface of the protrusion is inclined by a first angle with respect to the first major surface.
Author Shibata, Daisuke
Tanaka, Kenichiro
Kajitani, Ryo
Ishida, Masahiro
Tamura, Satoshi
Ueda, Tetsuzo
Author_xml – fullname: Tamura, Satoshi
– fullname: Ishida, Masahiro
– fullname: Ueda, Tetsuzo
– fullname: Shibata, Daisuke
– fullname: Tanaka, Kenichiro
– fullname: Kajitani, Ryo
BookMark eNrjYmDJy89L5WSQ8cssKcpMSVUoTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYYGxqamhibGTkbGxKgBAJMbJd8
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US10355143B2
GroupedDBID EVB
ID FETCH-epo_espacenet_US10355143B23
IEDL.DBID EVB
IngestDate Fri Jul 19 15:04:08 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US10355143B23
Notes Application Number: US201715816510
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190716&DB=EPODOC&CC=US&NR=10355143B2
ParticipantIDs epo_espacenet_US10355143B2
PublicationCentury 2000
PublicationDate 20190716
PublicationDateYYYYMMDD 2019-07-16
PublicationDate_xml – month: 07
  year: 2019
  text: 20190716
  day: 16
PublicationDecade 2010
PublicationYear 2019
RelatedCompanies PANASONIC CORPORATION
RelatedCompanies_xml – name: PANASONIC CORPORATION
Score 3.220041
Snippet A nitride semiconductor device includes: a substrate having a first major surface and a second major surface; a first nitride semiconductor layer of an n-type...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Nitride semiconductor device
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190716&DB=EPODOC&locale=&CC=US&NR=10355143B2
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFPVNp6JzSgXpW9HSLmkfitAvhrBuuFX2NpqYwHxoR1vx3_cSOueLvoUELpeD-_gldxeAB993BWFEWoLwwnIREFiMOb71VCB6LjzBCq6A4jQjk9x9WY1XPfjY1cLoPqFfujkiahRHfW-1vd7uL7FinVvZPLINTlXP6TKIzQ4do3fD-N-MwyCZz-JZZEZRkC_M7BVjXUfHBiGa6wMMo6lK_0reQlWVsv3tUtJTOJwjtbI9g54oB3Ac7X5eG8DRtHvwxmGne805jLJNWyPLRqPy2atSNWqtauNdKF2_gPs0WUYTC7dZ_5xpnS_2HDmX0EesL67AkHaBGIF7gnrclWiMHE5tW0rJ6Jgyal_D8G86w_8Wb-BEyUddS9pkBP22_hS36E9bdqcF8Q1KXXmD
link.rule.ids 230,309,783,888,25578,76886
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFOebTkXn1ArSt6KlXT8eitAvqq7dcK3srTQxgfnQjbbiv--ldM4XfQsJJJeD3939LskF4M62dWYQgyvMoIWiIyFQCNFs5aFA9lxYjBRUEMU4MaJMf15Olj342L6FaeuEfrXFERFRFPHetPZ6s0ti-e3dyvqerLBr_Rimji937Bi9G8b_su86wXzmzzzZ85xsISevGOtqbWzgornewxDbEmgI3lzxKmXz26WER7A_x9nK5hh6rBzCwNv-vDaEg7g78MZmh736BMbJqqlQZKkW99nXpSjUuq6kdyawfgq3YZB6kYLL5D97yrPFTiLtDPrI9dk5SFwtkCNQi5kW1TkaI42aqso5J-bEJKZ6AaO_5xn9N3gDgyiNp_n0KXm5hEOhK5GiVI0x9Jvqk12hb23IdauUbyYnfHU
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Nitride+semiconductor+device&rft.inventor=Tamura%2C+Satoshi&rft.inventor=Ishida%2C+Masahiro&rft.inventor=Ueda%2C+Tetsuzo&rft.inventor=Shibata%2C+Daisuke&rft.inventor=Tanaka%2C+Kenichiro&rft.inventor=Kajitani%2C+Ryo&rft.date=2019-07-16&rft.externalDBID=B2&rft.externalDocID=US10355143B2