Nitride semiconductor device

A nitride semiconductor device includes: a substrate having a first major surface and a second major surface; a first nitride semiconductor layer of an n-type which is disposed on the first major surface and has a protrusion; a second nitride semiconductor layer of a p-type disposed on the protrusio...

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Bibliographic Details
Main Authors Tamura, Satoshi, Ishida, Masahiro, Ueda, Tetsuzo, Shibata, Daisuke, Tanaka, Kenichiro, Kajitani, Ryo
Format Patent
LanguageEnglish
Published 16.07.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A nitride semiconductor device includes: a substrate having a first major surface and a second major surface; a first nitride semiconductor layer of an n-type which is disposed on the first major surface and has a protrusion; a second nitride semiconductor layer of a p-type disposed on the protrusion; a first anode electrode disposed above the first nitride semiconductor layer and the second nitride semiconductor layer; and a cathode electrode disposed under the second major surface, and a lateral surface of the protrusion is inclined by a first angle with respect to the first major surface.
Bibliography:Application Number: US201715816510