Semiconductor storage device and manufacturing method thereof

A semiconductor storage device according to an embodiment includes a plurality of memory cells, a first film, and a second film. The memory cells are placed at intervals in a first direction on a semiconductor substrate. The first film is placed continuously in the first direction above the memory c...

Full description

Saved in:
Bibliographic Details
Main Authors Fujitsuka, Ryota, Takahashi, Kensei, Kuge, Nobuhito
Format Patent
LanguageEnglish
Published 16.07.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor storage device according to an embodiment includes a plurality of memory cells, a first film, and a second film. The memory cells are placed at intervals in a first direction on a semiconductor substrate. The first film is placed continuously in the first direction above the memory cells so as to cover all of the memory cells and including mainly metal oxide. The second film is placed on the first film and including mainly silicon nitride or silicon dioxide.
Bibliography:Application Number: US201615000646