Forming recombination centers in a semiconductor device

Disclosed is a method. The method includes implanting recombination center particles into a semiconductor body via at least one contact hole in an insulation layer formed on top of the semiconductor body, forming a contact electrode electrically connected to the semiconductor body in the at least on...

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Main Authors Fischer, Petra, Joshi, Ravi Keshav, Binter, Alexander, Blank, Oliver, Pippan, Manfred, Jantscher, Wolfgang, Pekoll, Kurt, Syed, Waqas Mumtaz, Riegler, Andreas, Schustereder, Werner, Steinbrenner, Juergen
Format Patent
LanguageEnglish
Published 09.07.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed is a method. The method includes implanting recombination center particles into a semiconductor body via at least one contact hole in an insulation layer formed on top of the semiconductor body, forming a contact electrode electrically connected to the semiconductor body in the at least one contact hole, and annealing the semiconductor body to diffuse the recombination center particles in the semiconductor body. Forming the contact electrode includes forming a barrier layer on sections of the semiconductor body uncovered in the at least one contact hole, wherein the barrier layer is configured to inhibit the recombination center particles from diffusing out of the semiconductor body.
Bibliography:Application Number: US201715850041