Guard rings including semiconductor fins and regrown regions

A method includes forming a gate stack over a semiconductor fin, wherein the semiconductor fin forms a ring, and etching a portion of the semiconductor fin not covered by the gate stack to form a recess. The method further includes performing an epitaxy to grow an epitaxy semiconductor region from t...

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Bibliographic Details
Main Authors Hu, Chia-Hsin, Liang, Min-Chang
Format Patent
LanguageEnglish
Published 02.07.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method includes forming a gate stack over a semiconductor fin, wherein the semiconductor fin forms a ring, and etching a portion of the semiconductor fin not covered by the gate stack to form a recess. The method further includes performing an epitaxy to grow an epitaxy semiconductor region from the recess, forming a first contact plug overlying and electrically coupled to the epitaxy semiconductor region, and forming a second contact plug, wherein the second contact plug is overlying and electrically coupled to the gate stack.
Bibliography:Application Number: US201815876783