Sputtering target comprising Ni-P alloy or Ni-Pt-P alloy and production method therefor

A method of producing a Ni-P alloy sputtering target, wherein a Ni-P alloy having a P content of 15 to 21 wt % and remainder being Ni and unavoidable impurities is melted and atomized to prepare a Ni-P alloy atomized powder having an average grain size of 100 μm or less, the Ni-P alloy atomized powd...

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Bibliographic Details
Main Authors Ohashi, Kazumasa, Oda, Kunihiro
Format Patent
LanguageEnglish
Published 02.07.2019
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Summary:A method of producing a Ni-P alloy sputtering target, wherein a Ni-P alloy having a P content of 15 to 21 wt % and remainder being Ni and unavoidable impurities is melted and atomized to prepare a Ni-P alloy atomized powder having an average grain size of 100 μm or less, the Ni-P alloy atomized powder is mixed with a pure Ni atomized powder, and the obtained mixed powder is hot pressed. An object of the present invention is to provide a method of producing a Ni-P alloy sputtering target which achieves a small deviation from an intended composition.
Bibliography:Application Number: US201515129450