Sputtering target comprising Ni-P alloy or Ni-Pt-P alloy and production method therefor
A method of producing a Ni-P alloy sputtering target, wherein a Ni-P alloy having a P content of 15 to 21 wt % and remainder being Ni and unavoidable impurities is melted and atomized to prepare a Ni-P alloy atomized powder having an average grain size of 100 μm or less, the Ni-P alloy atomized powd...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | English |
Published |
02.07.2019
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A method of producing a Ni-P alloy sputtering target, wherein a Ni-P alloy having a P content of 15 to 21 wt % and remainder being Ni and unavoidable impurities is melted and atomized to prepare a Ni-P alloy atomized powder having an average grain size of 100 μm or less, the Ni-P alloy atomized powder is mixed with a pure Ni atomized powder, and the obtained mixed powder is hot pressed. An object of the present invention is to provide a method of producing a Ni-P alloy sputtering target which achieves a small deviation from an intended composition. |
---|---|
Bibliography: | Application Number: US201515129450 |