Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells

Thin-film photovoltaic devices and methods of their use and manufacture are disclosed. More particularly, polycrystalline CuIn(1-x)GaxSe2 (CIGS) based thin-film photovoltaic devices having independently tunable sublayers are disclosed. Also provided are methods of producing an n-doped graphene.

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Bibliographic Details
Main Authors Dissanayake, Nanditha M, Ang, Xiuzhu, Eisaman, Matthew, Ashraf, Ahsan, Goroff, Nancy
Format Patent
LanguageEnglish
Published 25.06.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Thin-film photovoltaic devices and methods of their use and manufacture are disclosed. More particularly, polycrystalline CuIn(1-x)GaxSe2 (CIGS) based thin-film photovoltaic devices having independently tunable sublayers are disclosed. Also provided are methods of producing an n-doped graphene.
Bibliography:Application Number: US201515127996