Organic thin film transistor and manufacturing method thereof

• Main Authors: Chen, Chun-Chih, Li, Zong-Xuan, Zan, Hsiao-Wen, Liu, Hung-Chuan, Chen, Wei-Tsung, Tsai, Chuang-Chuang
• Format: Patent
• Language: English
• Published: 18.06.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An organic thin film transistor includes a substrate, a hydrophobic layer, an oxide layer, a hydrophilic layer, a semiconductor layer, and a source/drain layer. The hydrophobic layer covers a surface of the substrate. The oxide layer is located on the hydrophobic layer and has plural segments. The hydrophilic layer is located on the segments of the oxide layer, and the oxide layer is located between the hydrophilic layer and the hydrophobic layer. The semiconductor layer is located on the hydrophilic layer, and the hydrophilic layer is located between the semiconductor layer and the oxide layer. The source/drain layer connects across the semiconductor layer on the segments of the oxide layer.