Backside metal grid and metal pad simplification

An image sensor includes a semiconductor material including a plurality of photodiodes disposed in the semiconductor material. The image sensor also includes a first insulating material disposed proximate to a frontside of the semiconductor material, and an interconnect disposed in the first insulat...

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Bibliographic Details
Main Authors Chen, Gang, Mao, Duli, Wang, Qin
Format Patent
LanguageEnglish
Published 28.05.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An image sensor includes a semiconductor material including a plurality of photodiodes disposed in the semiconductor material. The image sensor also includes a first insulating material disposed proximate to a frontside of the semiconductor material, and an interconnect disposed in the first insulating material proximate to the frontside of the semiconductor material. A metal pad extends from a backside of the semiconductor material through the first insulating material and contacts the interconnect. A metal grid is disposed proximate to the backside of the semiconductor material, and the semiconductor material is disposed between the metal grid and the first insulating material disposed proximate to the frontside.
Bibliography:Application Number: US201815873743