Micro-LED pick and place using metallic gallium

An LED die containing a gallium semiconductor layer is placed on a target substrate using a pick-up tool (PUT) attached to the LED die using metallic gallium. As a result of a laser lift-of (LLO) process to separate the gallium semiconductor layer from a substrate layer on which the gallium semicond...

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Bibliographic Details
Main Authors Pourchet, Allan, Saketi, Pooya
Format Patent
LanguageEnglish
Published 28.05.2019
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Summary:An LED die containing a gallium semiconductor layer is placed on a target substrate using a pick-up tool (PUT) attached to the LED die using metallic gallium. As a result of a laser lift-of (LLO) process to separate the gallium semiconductor layer from a substrate layer on which the gallium semiconductor layer is formed, a layer of gallium metal is formed on a surface of the LED die. The gallium layer is melted to form liquid gallium. A head of the PUT is contacted with the liquid gallium, whereupon the LED die is cooled such that the liquid gallium solidifies, attaching the LED die to the PUT. The PUT picks up and places the LED die at a desired location on a target substrate. The LED die can be heated to melt the gallium layer, allowing the PUT to be detached.
Bibliography:Application Number: US201816002640