Early gate silicidation in transistor elements

By decoupling the formation of a metal silicide in the gate electrode structure and the raised drain and source regions, superior flexibility in designing transistor elements and managing overall process flow may be achieved. To this end, the metal silicide in the gate electrode structures may be fo...

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Bibliographic Details
Main Author Smith, Elliot John
Format Patent
LanguageEnglish
Published 28.05.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:By decoupling the formation of a metal silicide in the gate electrode structure and the raised drain and source regions, superior flexibility in designing transistor elements and managing overall process flow may be achieved. To this end, the metal silicide in the gate electrode structures may be formed prior to actually patterning the gate electrode structures, while, also during this process sequence, a mask material may be applied for reliably covering any device regions in which a silicidation is not required. Consequently, superior gate conductivity may be accomplished, without increasing the risk of silicide penetration into the channel region of sophisticated fully depleted SOI transistors.
Bibliography:Application Number: US201715845340