Method for manufacturing MEMS double-layer suspension microstructure, and MEMS infrared detector
A method for manufacturing a MEMS double-layer suspension microstructure comprises steps of: forming a first film body on a substrate, and a cantilever beam connected to the substrate and the first film body; forming a sacrificial layer on the first film body and the cantilever beam; patterning the...
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Main Author | |
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Format | Patent |
Language | English |
Published |
28.05.2019
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Subjects | |
Online Access | Get full text |
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Summary: | A method for manufacturing a MEMS double-layer suspension microstructure comprises steps of: forming a first film body on a substrate, and a cantilever beam connected to the substrate and the first film body; forming a sacrificial layer on the first film body and the cantilever beam; patterning the sacrificial layer located on the first film body to manufacture a recessed portion used for forming a support structure, the bottom of the recessed portion being exposed of the first film body; depositing a dielectric layer on the sacrificial layer; patterning the dielectric layer to manufacture a second film body and the support structure, the support structure being connected to the first film body and the second film body; and removing the sacrificial layer to obtain the MEMS double-layer suspension microstructure. |
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Bibliography: | Application Number: US201515327902 |