High selectivity nitride removal process based on selective polymer deposition

A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively...

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Bibliographic Details
Main Authors Wise, Richard S, Dasaka, Ravi K, Fuller, Nicholas C. M, Nakamura, Masahiro, Engelmann, Sebastian U
Format Patent
LanguageEnglish
Published 23.04.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively deposited on the regions that are not to be etched during the removal of the nitride cap. The ability to remove the silicon nitride material using gas chemistry, causing formation of a volatile etch product and protection layer, enables reduction of the ion energy to the etching threshold.
Bibliography:Application Number: US201715462825