Forming doped regions in semiconductor strips

A method includes etching a semiconductor substrate to form trenches, with a portion of the semiconductor substrate between the trenches being a semiconductor strip, and depositing a dielectric dose film on sidewalls of the semiconductor strip. The dielectric dose film is doped with a dopant of n-ty...

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Bibliographic Details
Main Authors Tsai, Shin-Yeu, Huang, Shih-Wen, Cheng, Kai Hung, Lin, Chia-Hui
Format Patent
LanguageEnglish
Published 23.04.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method includes etching a semiconductor substrate to form trenches, with a portion of the semiconductor substrate between the trenches being a semiconductor strip, and depositing a dielectric dose film on sidewalls of the semiconductor strip. The dielectric dose film is doped with a dopant of n-type or p-type. The remaining portions of the trenches are filled with a dielectric material. A planarization is performed on the dielectric material. Remaining portions of the dielectric dose film and the dielectric material form Shallow Trench Isolation (STI) regions. A thermal treatment is performed to diffuse the dopant in the dielectric dose film into the semiconductor strip.
Bibliography:Application Number: US201815867255