Point-of-use enrichment of gas mixtures for semiconductor structure fabrication and systems for providing point-of-use enrichment of gas mixtures
Point-of-use enrichment of gas mixtures for semiconductor structure fabrication, and systems for providing point-of-use enrichment of gas mixtures, are described herein. In an example, a system for fabricating a semiconductor structure includes a process chamber for processing a substrate of a semic...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
16.04.2019
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Subjects | |
Online Access | Get full text |
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Summary: | Point-of-use enrichment of gas mixtures for semiconductor structure fabrication, and systems for providing point-of-use enrichment of gas mixtures, are described herein. In an example, a system for fabricating a semiconductor structure includes a process chamber for processing a substrate of a semiconductor structure. A gas supply is coupled to the process chamber. A point-of-use gas enrichment module is coupled to the gas supply. The point-of-use gas enrichment module is configured to concentrate a first gas composition to provide a second gas composition to the gas supply for the process chamber. The second gas composition has a relative amount of a hydride species greater than a relative amount of corresponding hydride species in the first gas composition. |
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Bibliography: | Application Number: US201615395128 |