Point-of-use enrichment of gas mixtures for semiconductor structure fabrication and systems for providing point-of-use enrichment of gas mixtures

Point-of-use enrichment of gas mixtures for semiconductor structure fabrication, and systems for providing point-of-use enrichment of gas mixtures, are described herein. In an example, a system for fabricating a semiconductor structure includes a process chamber for processing a substrate of a semic...

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Bibliographic Details
Main Authors Reynolds, Glyn Jeremy, Qiu, Taiqing, Bai, Xiao
Format Patent
LanguageEnglish
Published 16.04.2019
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Summary:Point-of-use enrichment of gas mixtures for semiconductor structure fabrication, and systems for providing point-of-use enrichment of gas mixtures, are described herein. In an example, a system for fabricating a semiconductor structure includes a process chamber for processing a substrate of a semiconductor structure. A gas supply is coupled to the process chamber. A point-of-use gas enrichment module is coupled to the gas supply. The point-of-use gas enrichment module is configured to concentrate a first gas composition to provide a second gas composition to the gas supply for the process chamber. The second gas composition has a relative amount of a hydride species greater than a relative amount of corresponding hydride species in the first gas composition.
Bibliography:Application Number: US201615395128