Infrared light emitting diode

An infrared light-emitting diode includes, from up to bottom, a P-type ohmic electrode, a contact layer, a P-type cladding layer, an active layer, an N-type cladding layer, a buffer layer, a GaAs substrate and an N-type ohmic electrode. The N-type cladding layer and the P-type cladding layer or eith...

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Bibliographic Details
Main Authors Wang, Jin, Wu, Chun-Yi, Wu, Chaoyu, Wang, Duxiang, Huang, Chun Kai
Format Patent
LanguageEnglish
Published 02.04.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An infrared light-emitting diode includes, from up to bottom, a P-type ohmic electrode, a contact layer, a P-type cladding layer, an active layer, an N-type cladding layer, a buffer layer, a GaAs substrate and an N-type ohmic electrode. The N-type cladding layer and the P-type cladding layer or either of them is InxGa1-xAs. The cladding layer of InxGa1-xAs, due to low resistance, can improve current expansion, reduce voltage and improve light-emitting efficiency.
Bibliography:Application Number: US201815871358