Light emitting device with trench beneath a top contact

• Main Author: Kharas, Boris
• Format: Patent
• Language: English
• Published: 05.03.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Embodiments of the invention are directed to structures in a vertical light emitting device that prevent light from being generated beneath absorbing structures, and/or direct light away from absorbing structures. Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A bottom contact is disposed on a bottom surface of the semiconductor structure. The bottom contact is electrically connected to one of the n-type region and the p-type region. A top contact is disposed on a top surface of the semiconductor structure. The top contact is electrically connected to the other of the n-type region and the p-type region. The top contact includes a first side and a second side opposite the first side. A first trench is formed in the semiconductor structure beneath the first side of the top contact. A second trench is formed in the seminconductor structure beneath the second side of the top contact.