Through-substrate via power gating and delivery bipolar transistor

Embodiments herein describe a through-substrate via formed in a semiconductor substrate that includes a transistor. In one embodiment, the through-substrate via includes a BJT which includes different doped semiconductor layers that form a collector, a base, and an emitter. The through-substrate via...

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Bibliographic Details
Main Authors Bartley, Gerald K, Sheets, II, John E, Paulsen, David P
Format Patent
LanguageEnglish
Published 05.03.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiments herein describe a through-substrate via formed in a semiconductor substrate that includes a transistor. In one embodiment, the through-substrate via includes a BJT which includes different doped semiconductor layers that form a collector, a base, and an emitter. The through-substrate via can also include metal contacts to the collector, base, and emitter which enable the through-substrate via to be coupled to a metal routing layer or a solder bump.
Bibliography:Application Number: US201715805210